Busque con el número de pieza junto con el fabricante o la descripción
EPC2016 |
Click to view a larger image
| Part Number | EPC2016 |
| Manufacturer | EPC |
| Description | eGaN® FET DATASHEET EPC2016 – Enhancement Mode Power Transistor VDSS , 100 V RDS(ON) , 16 mW ID , 11 A NEW PRODUCT EPC2016 EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafer... |
| Features |
rage Temperature
-40 to 125 -40 to 150
˚C
PARAMETER
Static Characteristics (TJ= 25˚C unless otherwise stated)
BVDSS Drain-to-Source Voltage
IDSS Drain Source Leakage
IGSS
Gate-Source Forward Leakage Gate-Source Reverse Leakage
VGS(th) RDS(ON)
Gate Threshold Voltage Drain-Source On Resistance
TEST CONDITIONS
VGS = 0 V, ID = 200 µA VDS = 80 V, VGS = 0 V
VGS = 5 V VGS = -5 V VDS = VGS, ID = 3 mA VGS = 5 V, ID = 11 A
Source-Drain Characteristics (TJ= 25˚C unless otherwise stated)
VSD
Source-Drain Forward Voltage
IS = 0.5 A, VGS = 0 V, T = 25˚C IS = 0.5 A, VGS = 0 V, T = 125˚C
All m... |
| Document |
 EPC2016 Data Sheet
PDF 1.19MB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
|