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STGW25M120DF3 |
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| Part Number | STGW25M120DF3 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inver... |
| Features |
• Maximum junction temperature: TJ = 175 °C • 10 μs of short-circuit withstand time • Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A • Tight parameter distribution • Positive VCE(sat) temperature coefficient • Low thermal resistance • Soft- and fast-recovery antiparallel diode G(1) C(2, TAB) Applications • Industrial drives • UPS • Solar • Welding Description E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency wh... |
| Document |
 STGW25M120DF3 Data Sheet
PDF 664.08KB |
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Desde 2024. D4U Semiconductor.
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