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SiR688DP |
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| Part Number | SiR688DP |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | N-Channel 60 V (D-S) MOSFET SiR688DP Vishay Siliconix PRODUCT SUMMARY VDS (V) 60 RDS(on) () Max. 0.0035 at VGS = 10 V 0.0045 at VGS = 6 V 0.0060 at VGS = 4.5 V ID (A)a 60 60 60 Qg (Typ.) 20.5 n... |
| Features |
• TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Low Qg for High Efficiency • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Primary Side Switch • Synchronous Rectifier • DC/DC Converter • DC/AC Inverters D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C VDS VGS ID Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Single Pulse Avalanche ... |
| Document |
 SiR688DP Data Sheet
PDF 323.18KB |
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