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TPH1R712MD |
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| Part Number | TPH1R712MD |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Title | Silicon P-Channel MOSFET |
| Features |
(1) Low drain-source on-resistance: RDS(ON) = 1.35 mΩ (typ.) (VGS = -4.5 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (3) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1.0 mA)
3. Packaging and Internal Circuit
TPH1R712MD
1,2,3: Source 4: Gate 5, 6, 7, 8: Drain
SOP Ad... |
| Document |
 TPH1R712MD Data Sheet
PDF 801.05KB |
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Desde 2024. D4U Semiconductor.
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