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TK31N60X |
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| Part Number | TK31N60X |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | MOSFETs Silicon N-Channel MOS (DTMOS-H) TK31N60X 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Stru... |
| Features |
(1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS
(2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.5 mA)
3. Packaging and Internal Circuit
TK31N60X
1: Gate 2: Drain (Heatsink) 3: Source
TO-247
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain ... |
| Document |
 TK31N60X Data Sheet
PDF 249.38KB |
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Desde 2024. D4U Semiconductor.
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