AS4C4M16D1A Alliance Semiconductor DDR, Hoja de datos, Ficha técnica, Distribuidor, Inventario y Mejor Precio

AS4C4M16D1A

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Part Number	AS4C4M16D1A
Manufacturer	Alliance Semiconductor
Description	Table 2. Pin Details Symbol Type Description CK, CK Input Differential Clock: CK and CK are differential clock inputs. All address and control input signals are sampled on the crossing of the p...
Features	Overview • Fast clock rate: 200 MHz • Differential Clock CK & CK • Bi-directional DQS • DLL enable/disable by EMRS • Fully synchronous operation • Internal pipeline architecture • Four internal banks, 1M x 16-bit for each bank • Programmable Mode and Extended Mode Registers - CAS Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved • Individual byte writes mask control • DM Write Latency = 0 • Auto Refresh and Self Refresh • 4096 refresh cycles / 64ms • Precharge & active power down • Power supplies: VDD & VDDQ = 2.5V ± 0.2V • Operating temperature: - Commercial ...
Document	AS4C4M16D1A Data Sheet PDF 1.82MB

No.	Parte #	Fabricante	Descripción
1	AS4C4M16S	Alliance Semiconductor	64Mb / 4M x 16 bit Synchronous DRAM
2	AS4C4M16SA	Alliance Semiconductor	64M Synchronous DRAM
3	AS4C4M16SA-C	Alliance Semiconductor	64M - (4M x 16 bit) Synchronous DRAM
4	AS4C4M16SA-I	Alliance Semiconductor	64M - (4M x 16 bit) Synchronous DRAM
5	AS4C4M32S	Alliance Semiconductor	4M x 32 bit Synchronous DRAM
6	AS4C4M4	Austin Semiconductor	16M FPM DRAM