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IXBH20N360HV |
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| Part Number | IXBH20N360HV |
| Manufacturer | IXYS |
| Description | Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT20N360HV IXBH20N360HV VCES = IC110 = VCE(sat) 3600V 20A 3.4V Symbol Test Conditions Maxim... |
| Features |
High Voltage Packages High Blocking Voltage High Peak Current Capability Low Saturation Voltage Advantages Low Gate Drive Requirement High Power Density Applications Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches © 2014 IXYS CORPORATION, All Rights Reserved DS100643(12/14) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 20A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 20A, VGE = 15V, VCE = 1000V td(on) tri In... |
| Document |
 IXBH20N360HV Data Sheet
PDF 287.68KB |
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Desde 2024. D4U Semiconductor.
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