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1N23WE |
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| Part Number | 1N23WE |
| Manufacturer | Advanced Semiconductor |
| Title | SILICON MIXER DIODE |
| Features |
• High burnout resistance • Low noise figure • Hermetically sealed package MAXIMUM RATINGS IF VR PDISS TJ TSTG O O 20 mA 1.0 V 5.0 (ERGS) @ TC = 25 C -55 C to +150 C -55 C to +150 C O O O NONE CHARACTERISTICS SYMBOL NF VSWR ZIF frange RL = 22 Ω TC = 25 C O TEST CONDITIONS F = 9375 MHz RL = 1... |
| Document |
 1N23WE Data Sheet
PDF 15.63KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 1N23WE |
DSI |
DIODE |
|
| 2 | 1N23WG |
Advanced Semiconductor |
SILICON MIXER DIODE |
|
| 3 | 1N2382 |
Motorola |
high-voltage silicon rectifier |
|
| 4 | 1N2383 |
Motorola |
high-voltage silicon rectifier |
|
| 5 | 1N2384 |
Motorola |
high-voltage silicon rectifier |
|
| 6 | 1N2385 |
Motorola |
high-voltage silicon rectifier |
|
Desde 2024. D4U Semiconductor.
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