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BFW11 |
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| Part Number | BFW11 |
| Manufacturer | COMSET |
| Description | : Symmetrical N-CHANNEL silicon planar epitaxial junction field-effect transistors in TO72 metal envelopes with the shield lead connected to the case. They are designed for broad band amplifiers (0 to... |
| Features |
Gate Cutoff Current
IDSS Drain Current
-VGS
Gate Source Voltage
-V(P)GS
Gate Source Cutoff Voltage
Test Condition(s)
-VGS = 20V VDS = 0
-VGS = 20V ; VDS = 0 Tj = 150°C
BFW10 BFW11 BFW10
BFW11
VDS = 15V VGS = 0
BFW10 BFW11
ID= 400µA BFW10 VDS = 15V
ID= 50µA BFW11
VDS = 15V ID= 0.5nA
BFW10 BFW11
Min Typ Max Unit
- - 0.1 nA
-
8 4 2 1.25 -
-
-
0.5 µA
20 mA
10
7.5 V
4
8 V
6
SMALL SIGNAL CHARACTERISTICS
Tj = 25°C unless otherwise specified
Symbol
Ratings
Test Condition(s)
VDS = 15V
VGS = 0
f= 1kHz
Yfs
Trasfer admittance
VDS = 15V
VGS = 0
f= 200MHz
VDS = 15V
Yos
Out... |
| Document |
 BFW11 Data Sheet
PDF 58.38KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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