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SiR638DP |
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| Part Number | SiR638DP |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | www.vishay.com SiR638DP Vishay Siliconix N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) () (MAX.) 0.00088 at VGS = 10 V 0.00116 at VGS = 4.5 V ID (A) a, g 100 100 Qg (TYP.) 63 ... |
| Features |
• TrenchFET® Gen IV power MOSFET • 100 % Rg and UIS tested • Qgd / Qgs ratio < 1 optimizes switching characteristics • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous rectification • ORing • High power density DC/DC • VRMs and embedded DC/DC • DC/AC inverters • Load switch D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Puls... |
| Document |
 SiR638DP Data Sheet
PDF 407.98KB |
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Desde 2024. D4U Semiconductor.
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