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EPC2111 |
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| Part Number | EPC2111 |
| Manufacturer | EPC |
| Description | eGaN® FET DATASHEET EPC2111 – Enhancement-Mode GaN Power Transistor Half-Bridge VDS , 30 V RDS(on) , 19 mΩ (Q1), 8 mΩ (Q2) ID , 16 A (Q1), 16 A (Q2) EPC2111 EFFICIENT POWER CONVERSION HAL Gallium ... |
| Features |
ID
Continuous (TA = 25°C, RθJA = 36°C/W) Pulsed (25°C, TPULSE = 300 µs)
VGS
Gate-to-Source Voltage Gate-to-Source Voltage
TJ Operating Temperature TSTG Storage Temperature
VALUE 30 36 16 50 6 -4
–40 to 150 –40 to 150 30 36 16 140 6 -4 –40 to 150 –40 to 150 UNIT V A V °C V A V °C Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 1.3 RθJB Thermal Resistance, Junction-to-Board 6.6 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 58 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz c... |
| Document |
 EPC2111 Data Sheet
PDF 2.00MB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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