BUK6607-75C |
Part Number | BUK6607-75C |
Manufacturer | nexperia (https://www.nexperia.com/) |
Description | Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the app... |
Features |
AEC Q101 compliant Suitable for intermediate level gate
drive sources
Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V and 24 V Automotive systems Electric and electro-hydraulic power
steering Motors, lamps and solenoid control
Start-Stop micro-hybrid applications Transmission control Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj ≥ 25 °C; Tj ≤ 175 °C
voltage
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot
total po... |
Document |
BUK6607-75C Data Sheet
PDF 929.58KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BUK6607-75C |
NXP Semiconductors |
N-channel TrenchMOS FET | |
2 | BUK6607-55C |
NXP Semiconductors |
N-Channel MOSFET | |
3 | BUK6607-55C |
nexperia |
N-channel MOSFET | |
4 | BUK6610-75C |
NXP Semiconductors |
N-channel TrenchMOS FET | |
5 | BUK661R6-30C |
nexperia |
N-channel TrenchMOS intermediate level FET | |
6 | BUK661R6-30C |
NXP |
N-channel TrenchMOS intermediate level FET |