PSMN041-80YL |
Part Number | PSMN041-80YL |
Manufacturer | nexperia (https://www.nexperia.com/) |
Description | Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide range of industrial, communications a... |
Features |
• High efficiency due to low switching and conduction losses • Suitable for logic level gate drive • LFPAK56 package is footprint compatible with other Power-SO8 types • Qualified to 175 °C 3. Applications • DC-to-DC converters • Load switch • TV power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 1 Ptot total power dissipation Tmb = 25 °C; Fig. 2 Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 5 A; Tj = 25 °C... |
Document |
PSMN041-80YL Data Sheet
PDF 768.56KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | PSMN041-80YL |
NXP |
MOSFET | |
2 | PSMN040-100MSE |
NXP |
MOSFET | |
3 | PSMN040-100MSE |
nexperia |
N-channel MOSFET | |
4 | PSMN040-200W |
Philips |
N-channel TrenchMOS transistor | |
5 | PSMN045-80YS |
NXP Semiconductors |
MOSFET | |
6 | PSMN045-80YS |
nexperia |
N-channel MOSFET |