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PHP29N08T |
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| Part Number | PHP29N08T |
| Manufacturer | nexperia (https://www.nexperia.com/) |
| Description | Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, co... |
| Features |
High noise immunity due to high gate threshold voltage
Low conduction losses due to low on-state resistance
1.3 Applications
Industrial motor control
1.4 Quick reference data
Table 1. Quick reference
Symbol VDS ID
Parameter drain-source voltage drain current
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C; VGS = 11 V; see Figure 1; see Figure 3
Ptot total power dissipation
Tmb = 25 °C; see Figure 2
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 29 A; VDS = 60 V; Tj = 25 °C; see Figure 11
Static characteristics
RDSon
drain-source on-state resistance
VGS = 1... |
| Document |
 PHP29N08T Data Sheet
PDF 675.65KB |
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