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PHB66NQ03LT |
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| Part Number | PHB66NQ03LT |
| Manufacturer | nexperia (https://www.nexperia.com/) |
| Description | Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consu... |
| Features |
Low conduction losses due to low on-state resistance
Suitable for logic level gate drive sources
1.3 Applications
DC-to-DC convertors
General purpose switching
1.4 Quick reference data
Table 1. Quick reference
Symbol VDS ID Ptot
Parameter drain-source voltage drain current total power dissipation
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V Tmb = 25 °C; see Figure 2
Dynamic characteristics
QGD
gate-drain charge
VGS = 5 V; ID = 50 A; VDS = 15 V; Tj = 25 °C; see Figure 11
Static characteristics
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 25 A; Tj... |
| Document |
 PHB66NQ03LT Data Sheet
PDF 683.48KB |
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Desde 2024. D4U Semiconductor.
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