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PHB33NQ20T |
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| Part Number | PHB33NQ20T |
| Manufacturer | nexperia (https://www.nexperia.com/) |
| Description | Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, co... |
| Features |
Higher operating power due to low thermal resistance
Low conduction losses due to low on-state resistance
Simple gate drive required due to low gate charge
Suitable for high frequency applications due to fast switching characteristics
1.3 Applications
DC-to-DC primary side switching
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3
Ptot total power dissipation
Tmb = 25 °C; see Figure 2
Dynamic characteristics
QGD
gate-drain ch... |
| Document |
 PHB33NQ20T Data Sheet
PDF 682.24KB |
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