PHB29N08T |
Part Number | PHB29N08T |
Manufacturer | nexperia (https://www.nexperia.com/) |
Description | Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, co... |
Features |
High noise immunity due to high gate threshold voltage
Low conduction losses due to low on-state resistance
1.3 Applications
Industrial motor control
1.4 Quick reference data
Table 1. Quick reference
Symbol VDS ID
Parameter drain-source voltage drain current
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C; VGS = 11 V; see Figure 1 and 3
Min Typ Max Unit - - 75 V - - 27 A
Ptot total power dissipation
Tmb = 25 °C; see Figure 2
- - 88 W
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 29 A; VDS = 60 V; Tj = 25 °C; see Figure 11
- 9 - nC
Static characteristics
R... |
Document |
PHB29N08T Data Sheet
PDF 678.03KB |
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