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PHB27NQ10T |
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| Part Number | PHB27NQ10T |
| Manufacturer | nexperia (https://www.nexperia.com/) |
| Description | Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, co... |
| Features |
Higher operating power due to low thermal resistance Low conduction losses due to low on-state resistance Suitable for high frequency applications due to fast switching characteristics 1.3 Applications DC-to-DC converters Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol VDS Parameter drain-source voltage Conditions Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tmb = 25 °C; VGS = 10 V Ptot total power Tmb = 25 °C dissipation Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 14 A; Tj = 25 °C Dynamic c... |
| Document |
 PHB27NQ10T Data Sheet
PDF 890.51KB |
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