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PH2925U |
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| Part Number | PH2925U |
| Manufacturer | nexperia (https://www.nexperia.com/) |
| Description | Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, c... |
| Features |
Higher operating power due to low thermal resistance
Interfaces directly with low voltage gate drivers
Low conduction losses due to low on-state resistance
1.3 Applications
DC-to-DC convertors Notebook computers
Portable equipment Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C
ID drain current
Tmb = 25 °C; VGS = 4.5 V; see Figure 1; see Figure 3
Ptot total power dissipation
Tmb = 25 °C; see Figure 2
Dynamic characteristics
QGD
gate-drain charge VGS = 4.5 V; ... |
| Document |
 PH2925U Data Sheet
PDF 687.29KB |
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