Part Number | BSP60 |
Manufacturer | nexperia (https://www.nexperia.com/) |
Description | PNP Darlington transistor in an SOT223 plastic package. NPN complement: BSP50 2. Features and benefits • High current of -1 A • Low voltage of -45 V • Integrated diode and resistor • AEC-Q101 qualifi... |
Features |
• High current of -1 A • Low voltage of -45 V • Integrated diode and resistor • AEC-Q101 qualified 3. Applications • Industrial switching applications such as: - Print hammer - Solenoid - Relay and lamp drivers 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCBO collector-base voltage VCES collector-emitter voltage IC collector current ICM peak collector current hFE DC current gain Conditions open emitter base short-circuited to emitter VCE = -10 V; IC = -150 mA [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. Min Typ Max Unit - - -60 V - - -45 V --[1] 1000 - -1 ... |
Document |
BSP60 Data Sheet
PDF 187.85KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BSP60 |
NXP |
PNP Darlington transistors | |
2 | BSP60 |
Infineon Technologies AG |
PNP Silicon Darlington Transistors | |
3 | BSP603S2L |
Infineon Technologies AG |
OptiMOS Power-Transistor | |
4 | BSP61 |
NXP |
PNP Darlington transistors | |
5 | BSP61 |
Siemens Semiconductor Group |
PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage) | |
6 | BSP61 |
Infineon Technologies AG |
PNP Silicon Darlington Transistors |