PSMN1R2-30YLD nexperia N-channel MOSFET Datasheet. existencias, precio

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PSMN1R2-30YLD

nexperia
PSMN1R2-30YLD
PSMN1R2-30YLD PSMN1R2-30YLD
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Part Number PSMN1R2-30YLD
Manufacturer nexperia (https://www.nexperia.com/)
Description 250 A logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking per...
Features
• 250 A capability
• Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
• Superfast switching with soft-recovery; s-factor > 1
• Low spiking and ringing for low EMI designs
• Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C
• Optimised for 4.5 V gate drive
• Low parasitic inductance and resistance
• High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C
• Wave solderable; exposed leads for optimal visual solder inspection 3. Applications
• On-board ...

Document Datasheet PSMN1R2-30YLD Data Sheet
PDF 298.08KB

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