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NE3210S01 |
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| Part Number | NE3210S01 |
| Manufacturer | CEL |
| Description | The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial ... |
| Features |
• Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz • Gate Length: Lg ≤ 0.20 µm • Gate Width : Wg = 160 µm ORDERING INFORMATION (PLAN) Part Number Supplying Form NE3210S01-T1 Tape & reel 1 000 pcs./reel NE3210S01-T1B Tape & reel 4 000 pcs./reel Marking K Remark For sample order, please contact your nearby sales office. (Part number for sample order: NE3210S01-A) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Symbol Drain to Source Voltage VDS Gate to Source Voltage VGS Drain Current ID Gate Current IG Total Power Dissipation P... |
| Document |
 NE3210S01 Data Sheet
PDF 729.40KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NE3210S01 |
NEC |
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET |
|
| 2 | NE321000 |
NEC |
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP |
|
| 3 | NE321000 |
CEL |
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET |
|
| 4 | NE32400 |
NEC |
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP |
|
| 5 | NE32484A |
NEC |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
|
| 6 | NE32484A-SL |
NEC |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
|
Desde 2024. D4U Semiconductor.
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