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GTVA262701FA |
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| Part Number | GTVA262701FA |
| Manufacturer | Wolfspeed |
| Description | The GTVA262701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a t... |
| Features |
input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange.
GTVA262701FA Package H-87265J-2
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 320 mA, ƒ = 2690 MHz.
3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth
24
20 Gain
16
Efficiency
60 40 20
12 0
8 PAR @ 0.01% CCDF
-20
4 -40
Features
• GaN on SiC HEMT technology • Input matched • Typical pulsed CW performance: 10 µs pulse width, 10% duty cycle, 2690 MHz, 48 V - Output power at P3dB = 270 W - Efficiency = 66% - Gain = 18.1 dB • Human Body Mod... |
| Document |
 GTVA262701FA Data Sheet
PDF 344.96KB |
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Desde 2024. D4U Semiconductor.
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