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IPC100N04S5L-2R6 |
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| Part Number | IPC100N04S5L-2R6 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | IPC100N04S5L-2R6 OptiMOS™-5 Power-Transistor Features • OptiMOS™ - power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak r... |
| Features |
• OptiMOS™ - power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Product Summary VDS RDS(on),max ID 40 V 2.6 mW 100 A PG-TDSON-8-33 1 1 Type IPC100N04S5L-2R6 Package Marking PG-TDSON-8-33 5N04L2R6 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) ... |
| Document |
 IPC100N04S5L-2R6 Data Sheet
PDF 385.14KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPC100N04S5L-1R1 |
Infineon |
Power-Transistor |
|
| 2 | IPC100N04S5L-1R5 |
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Power-Transistor |
|
| 3 | IPC100N04S5L-1R9 |
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| 4 | IPC100N04S5-1R2 |
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Power-Transistor |
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| 5 | IPC100N04S5-1R7 |
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Power-Transistor |
|
| 6 | IPC100N04S5-1R9 |
Infineon |
Power-Transistor |
|
Desde 2024. D4U Semiconductor.
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