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BTB1386M3 |
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| Part Number | BTB1386M3 |
| Manufacturer | CYStech |
| Description | CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB1386M3 Spec. No. : C815M3 Issued Date : 2005.03.25 Revised Date : 2014.05.20 Page No. : 1/6 Features • Low VCE(sat), VCE(sat)=... |
| Features |
• Low VCE(sat), VCE(sat)=-0.25 V (typical), at IC / IB = -3A / -60mA • Excellent DC current gain characteristics • Complementary to BTD2098M3 • Pb-free lead plating and halogen-free package Symbol BTB1386M3 Outline SOT-89 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating Junction and Storage Temperature Range Note : 1. Single Pulse Pw=10ms 2. When mounted on a 40 ×40 ×0.7 mm ceramic board. Thermal Data Parameter Thermal Resistance, Junction-to-cas... |
| Document |
 BTB1386M3 Data Sheet
PDF 228.16KB |
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