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EPC2115 |
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| Part Number | EPC2115 |
| Manufacturer | EPC |
| Description | The EPC2115 enhancement-mode gallium-nitride (eGaN®) monolithic IC contains two monolithic 88-mΩ, 150-V GaN power transistors, each with an optimized gate driver, in a low inductance 2.9 mm by 1.1 mm ... |
| Features |
• Integrated Gate Driver – Low Propagation Delay – Up to 7 MHz Operation – Operates from 5 V Supply • Dual 88-mΩ, 150-V eGaN FET • Low Inductance 2.9 mm x 1.1 mm BGA EPC2115 devices are supplied only in passivated die form with solder balls Die Size: 2.9 mm x 1.1 mm APPLICATIONS: • Wireless Power (Highly Resonant and Inductive) • High Frequency DC-DC Conversion Schematic Diagram DESCRIPTION The EPC2115 enhancement-mode gallium-nitride (eGaN®) monolithic IC contains two monolithic 88-mΩ, 150-V GaN power transistors, each with an optimized gate driver, in a low inductance 2.9 mm by 1.1 mm B... |
| Document |
 EPC2115 Data Sheet
PDF 734.78KB |
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