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EPC2112 |
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| Part Number | EPC2112 |
| Manufacturer | EPC |
| Description | The EPC2112 enhancement-mode gallium-nitride (eGaN®) integrated driver and FET consists of a 40-mΩ, 200 V eGaN power transistor and an optimized gate driver in a low inductance 2.9 mm by 1.1 mm surfac... |
| Features |
• Integrated Gate Driver – Low Propagation Delay – Up to 7 MHz Operation – Operates from 5 V Supply • 200 V, 40-mΩ eGaN FET • Low Inductance 2.9 mm x 1.1 mm BGA EPC2112 devices are supplied only in passivated die form with solder balls Die Size: 2.9 mm x 1.1 mm APPLICATIONS: • Wireless Power (Highly Resonant and Inductive) • High Frequency DC-DC Conversion Schematic Diagram DESCRIPTION The EPC2112 enhancement-mode gallium-nitride (eGaN®) integrated driver and FET consists of a 40-mΩ, 200 V eGaN power transistor and an optimized gate driver in a low inductance 2.9 mm by 1.1 mm surfacemount... |
| Document |
 EPC2112 Data Sheet
PDF 498.58KB |
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