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Si6433DQ |
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| Part Number | Si6433DQ |
| Manufacturer | Fairchild Semiconductor |
| Description | This P-Channel 1.8V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low... |
| Features |
• –4.5 A, –20 V. RDS(ON) = 47 mΩ @ VGS = –4.5 V RDS(ON) = 65 mΩ @ VGS = –2.5 V RDS(ON) = 100 mΩ @ VGS = –1.8 V • RDS(ON) rated for use with 1.8 V logic • Low gate charge (13nC typical) • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package D S S D TSSOP-8 G S S D Pin 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS Drain –Source Voltage VGSS ID Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) TJ, TSTG Op... |
| Document |
 Si6433DQ Data Sheet
PDF 133.46KB |
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Desde 2024. D4U Semiconductor.
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