GC50MPS12-247 GeneSiC Silicon Carbide Schottky Diode Datasheet. existencias, precio

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GC50MPS12-247

GeneSiC
GC50MPS12-247
GC50MPS12-247 GC50MPS12-247
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Part Number GC50MPS12-247
Manufacturer GeneSiC
Description GC50MPS12-247 1200V 50A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Superior Figure of Merit QC/IF • Low Th...
Features
• High Avalanche (UIS) Capability
• Enhanced Surge Current Capability
• Superior Figure of Merit QC/IF
• Low Thermal Resistance
• 175 °C Maximum Operating Temperature
• Temperature Independent Switching Behavior
• Positive Temperature Coefficient of VF
• Extremely Fast Switching Speeds Package Case K VRRM IF (Tc = 135°C) QC Case K A TO-247-2 A = 1200 V = 70 A = 110 nC Advantages
• Low Standby Power Losses
• Improved Circuit Efficiency (Lower Overall Cost)
• Low Switching Losses
• Ease of Paralleling without Thermal Runaway
• Smaller Heat Sink Requirements
• Low Reverse Recovery Current
•...

Document Datasheet GC50MPS12-247 Data Sheet
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