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GTVA263202FC |
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| Part Number | GTVA263202FC |
| Manufacturer | Wolfspeed |
| Description | The GTVA263202FC is a 340-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, ... |
| Features |
input matching, high efficiency, and a thermallyenhanced surface-mount package with earless flange.
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(M) = 200 mA, IDQ(PK) = 200 mA,
ƒ = 2690 MHz 3GPP WCDMA signal,
PAR = 10 dB, 3.84 MHz BW
32 80
28
Gain
24
Efficiency
60 40
20 20
16 0
12 -20
8 4 PAR @ 0.01% CCDF
-40 -60
0 29
gtva263202fc_g1
-80
33 37 41 45 49 53
Average Output Power (dBm)
GTVA263202FC Package H-37248-4
Features
• GaN on SiC HEMT technology • Input matched • Typical pulsed CW performance, 2690 MHz, 48 V, combined outputs... |
| Document |
 GTVA263202FC Data Sheet
PDF 384.80KB |
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Desde 2024. D4U Semiconductor.
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