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IS35ML04G084 |
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| Part Number | IS35ML04G084 |
| Manufacturer | ISSI |
| Description | IS34ML04G084 IS35ML04G084 4Gb SLC-4b ECC 3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE IS34/35ML04G084 4Gb (x8) 3.3V NAND FLASH MEMORY with 4b ECC FEATURES Flexible & Efficient Memory Architec... |
| Features |
Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell Highest performance - Read Performance - Random Read: 25us (Max.) - Serial Access: 25ns (Max.) - Write Performance - Program time: 300us - typical - Block Erase time: 3ms – typical Low Power with Wide Temp. Ranges - Single 3.3V (2.7V to 3.6V) Voltage Supply - 10 mA Active Read Current - 8 µA Standby Current - Temp Grades: - Industrial: -40°C to +85°C - Extend... |
| Document |
 IS35ML04G084 Data Sheet
PDF 1.30MB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IS35ML04G081 |
ISSI |
4Gb 3.3V X8 NAND FLASH MEMORY |
|
| 2 | IS35ML04G088 |
ISSI |
4Gb SLC-8b ECC |
|
| 3 | IS35ML04G0168 |
ISSI |
4Gb SLC-8b ECC |
|
| 4 | IS35ML01G081 |
ISSI |
1Gb (x8) 3.3V NAND FLASH MEMORY |
|
| 5 | IS35ML01G084 |
ISSI |
1Gb(x8) 3.3V NAND FLASH MEMORY |
|
| 6 | IS35ML02G084 |
ISSI |
2Gb(x8) 3.3V NAND FLASH MEMORY |
|
Desde 2024. D4U Semiconductor.
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