FDS4935 |
Part Number | FDS4935 |
Manufacturer | Fairchild Semiconductor |
Description | This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive v... |
Features |
• –7 A, –30 V RDS(ON) = 23 mΩ @ VGS = –10 V RDS(ON) = 35 mΩ @ VGS = –4.5 V • Low gate charge (15nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability DD1DD1 DD2 DD2 SO-8 Pin 1 SO-8 SS2GS2SS1GG1 5 6 Q1 7 Q2 8 4 3 2 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Power Dissipation for Dual Operation PD Power Dissipation for Single ... |
Document |
FDS4935 Data Sheet
PDF 118.70KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FDS4935A |
Fairchild Semiconductor |
Dual 30V P-Channel MOSFET | |
2 | FDS4935A |
ON Semiconductor |
Dual P-Channel MOSFET | |
3 | FDS4935BZ |
Fairchild Semiconductor |
Dual 30 Volt P-Channel MOSFET | |
4 | FDS4935BZ |
ON Semiconductor |
Dual 30 Volt P-Channel PowerTrench MOSFET | |
5 | FDS4953 |
Fairchild Semiconductor |
Dual 30V P-Channel MOSFET | |
6 | FDS4070N3 |
Fairchild Semiconductor |
N-Channel MOSFET |