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RD02LUS2 |
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| Part Number | RD02LUS2 |
| Manufacturer | Mitsubishi |
| Description | RD02LUS2 is a MOS FET type transistor designed for VHF/UHF RF driver device. OUTLINE DRAWING FEATURES 1.High Power Gain and High Efficiency Pout>2.0W, Gp=10dB, Drain Effi. =60%typ @ f=470MHz, VDS=3.... |
| Features |
1.High Power Gain and High Efficiency Pout>2.0W, Gp=10dB, Drain Effi. =60%typ @ f=470MHz, VDS=3.6V, Idq=140mA, Pin=0.2W
2.Integrated gate protection diode
APPLICATION
For driver stage of high power amplifiers in VHF/UHF Band mobile radio sets.
RoHS COMPLIANT
RD02LUS2-501, T513 is EU RoHS compliant. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.
1. Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS ... |
| Document |
 RD02LUS2 Data Sheet
PDF 1.66MB |
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