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NE4210S01 |
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| Part Number | NE4210S01 |
| Manufacturer | CEL |
| Description | The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial ... |
| Features |
• Super Low Noise Figure & High Associated Gain NF = 0.5 dB TYP. Ga = 13.0 dB TYP. @f = 12 GHz • Gate Length: Lg ≤ 0.20 µm • Gate Width : Wg = 160 µm ORDERING INFORMATION (PLAN) Part Number Marking NE4210S01-T1 L NE4210S01-T1B Supplying Form Tape & reel 1 kp/reel Tape & reel 4 kp/reel Remark To order evaluation samples, please contact your nearby sales office. (Part number for sample order: NE4210S01-A) ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 4.0 V Gate to Source Voltage VGS –3.0 V Drain Current Gate Current ID IDS... |
| Document |
 NE4210S01 Data Sheet
PDF 1.36MB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NE4210S01 |
NEC |
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
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| 2 | NE4210M01 |
NEC |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
|
| 3 | NE42484A |
NEC |
NONLINEAR MODEL |
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| 4 | NE425S01 |
NEC |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
|
| 5 | NE429M01 |
NEC |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
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| 6 | NE41137 |
California Eastern Laboratories |
N-Channel GaAs Dual Gate MES FET |
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Desde 2024. D4U Semiconductor.
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