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F2270 |
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| Part Number | F2270 |
| Manufacturer | IDT |
| Description | The F2270 is a 75Ω, low insertion loss voltage variable RF attenuator (VVA) designed for a multitude of wireless and other RF applications. This device covers a broad frequency range from 5MHz to 3000... |
| Features |
include a VMODE pin allowing either a positive or negative voltage control slope versus attenuation and multi-directional operation where the RF input can be applied to either the RF1 or RF2 pins. The attenuation control voltage range is from 0V to 5V using either a 3.3V or 5V power supply.
Competitive Advantage
The F2270 provides extremely low insertion loss and superb IP3, IP2, return loss performance, and slope linearity across the control range. Compared to the previous state-of-the-art for silicon VVA... |
| Document |
 F2270 Data Sheet
PDF 4.59MB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | F2201 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|
| 2 | F2202 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|
| 3 | F2211 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|
| 4 | F2212 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
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| 5 | F2213 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|
| 6 | F2246 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
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Desde 2024. D4U Semiconductor.
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