SVT120N08T |
Part Number | SVT120N08T |
Manufacturer | Silan Microelectronics |
Description | SVT120N08T/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored ... |
Features |
120A,80V, RDS(on)(typ.)=7mΩ@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
ORDERING INFORMATION
Part No.
SVT120N08T SVT120N08S SVT120N08STR
Package
TO-220-3L TO-263-2L TO-263-2L
Marking
120N08T 120N08S 120N08S
Hazardous Substance Control
Pb free Halogen free Halogen free
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25°C)
Characteristics
Drain-Source Voltage Gate-Source Voltage
Drain Current Drain Current Pulsed
TC=25°C TC=100°C
Power Dissipation(TC=25°C) -Derate above 25°C
Single Pulsed Avalanche En... |
Document |
SVT120N08T Data Sheet
PDF 241.85KB |
Similar Datasheet
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