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MA4E1310 |
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| Part Number | MA4E1310 |
| Manufacturer | MA-COM |
| Description | M/A-COM's MA4E1310 is a gallium arsenide flip chip Schottky barrier diode. This diode is fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low par... |
| Features |
Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Easy Circuit Insertion Description M/A-COM's MA4E1310 is a gallium arsenide flip chip Schottky barrier diode. This diode is fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. This device is fully passivated with silicon nitride and has an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The ... |
| Document |
 MA4E1310 Data Sheet
PDF 600.77KB |
Similar Datasheet
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| 1 | MA4E1317 |
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| 2 | MA4E1317 |
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| 3 | MA4E1318 |
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| 5 | MA4E1319-1 |
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| 6 | MA4E1319-1 |
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Desde 2024. D4U Semiconductor.
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