IRFD120 |
Part Number | IRFD120 |
Manufacturer | GE |
Description | ~D~[P~ FIELD EFFECT POWER TRANSISTOR IRFD120,121 D82CL2,K2 1.3 AMPERES 100,60 VOLTS RDS(ON) = 0.3 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technolo... |
Features |
• Polysilicon gate - Improved stability and reliability • No secondary breakdown - Excellent ruggedness • Ultra-fast switching - Independent of temperature • Voltage controlled - High transconductance • Low input capacitance - Reduced drive requirement • Excellent thermal stability - Ease of paralleling N-CHANNEL CASE STYLE 4-PIN DIP DIMENS... |
Document |
IRFD120 Data Sheet
PDF 186.74KB |
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