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IRFD111 |
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| Part Number | IRFD111 |
| Manufacturer | GE |
| Description | ~o~~ FIELD EFFECT POVVER TRANSISTOR IRFD110,111 D82Bl2,K2 1.0 AMPERES 100,60 VOLTS RDS(ON} = 0.6 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technolog... |
| Features |
• Polysilicon gate - Improved stability and reliability • No secondary breakdown - Excellent ruggedness • Ultra-fast switching - Independent of temperature • Voltage controlled - High transconductance • Low input capacitance - Reduced drive requirement • Excellent thermal stability - Ease of paralleling N-CHANNEL CASE STYLE 4-PIN DIP DIMENSI... |
| Document |
 IRFD111 Data Sheet
PDF 188.89KB |
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Desde 2024. D4U Semiconductor.
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