K20N60 |
Part Number | K20N60 |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode 75% lower Eoff compared to previous generation combined with low conduction losses Short cir... |
Features |
rrent TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2 VGE = 15V, VCC 600V, Tj 150C Power dissipation TC = 25C Soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s Operating junction and storage temperature
Symbol VCE IC
ICpuls -
IF
IFpuls VGE tSC Ptot Ts Tj , Tstg
Value
Unit
600
V
A
40
20
80 80
40
20
80
20
V
10
s
179
W
260
°C
-55...+150
C
1 J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2_3 12.06.2013
SKW20N60
Ther... |
Document |
K20N60 Data Sheet
PDF 467.33KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | K2000-R |
Fuji Electric |
2SK2000-R | |
2 | K2000EH70 |
Littelfuse |
High Energy Bidirectional SIDACs | |
3 | K2000G |
JIEJIE |
Sidac | |
4 | K2000G |
Sunmate |
Axial Leaded Silicon Bilateral Voltage Triggered | |
5 | K2000GH |
Littelfuse |
High Energy Bidirectional SIDACs | |
6 | K2000GHU |
Littelfuse |
High Energy Unidirectional SIDACs |