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FPA108 |
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| Part Number | FPA108 |
| Manufacturer | Fairchild Semiconductor |
| Description | The FPA103/104/105/106/107,108 consists of a GaAs infrared-emitting diode and a silicon npn phototransistor. The axial radiant intensity of the diode and the axial response o.f the phOtotransistor are... |
| Features |
r to prevent visible light from entering the phototransistor.
Reduces Mechanical Design and Packaging Problems
High Sensitivity Excellent Stability Low Temperature Coefficient
Absolute Maximum Ratings
Maximum Temperature and Humidity
Storage Temperature
-40°C to +100°C
Operating Temperature
-40°C to +100°C
Pin Temperature (Soldering, 10 s) 260°C
Relative Humidity at 65°C
85%
Input Diode
IF Forward de Current VR Reverse Voltage
Power Dissipation at
= TA 25°C
Derate Linearly from 25°C
75 mA 3.0 V
110 mW 1.47 mW/oC
Output Transistor Ic Collector de Current VCE Collector-to-Emitter
Vo... |
| Document |
 FPA108 Data Sheet
PDF 170.23KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FPA100 |
Fairchild Semiconductor |
Emitter And Sensor Matched Pair Arrays |
|
| 2 | FPA101 |
Fairchild Semiconductor |
Emitter And Sensor Matched Pair Arrays |
|
| 3 | FPA102 |
Fairchild Semiconductor |
Emitter And Sensor Matched Pair Arrays |
|
| 4 | FPA103 |
Fairchild Semiconductor |
Light Reflection Emitter / Sensor Array |
|
| 5 | FPA104 |
Fairchild Semiconductor |
Light Reflection Emitter / Sensor Array |
|
| 6 | FPA105 |
Fairchild Semiconductor |
Light Reflection Emitter / Sensor Array |
|
Desde 2024. D4U Semiconductor.
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