FPA105 |
Part Number | FPA105 |
Manufacturer | Fairchild Semiconductor |
Description | The FPA103/104/105/106/107,108 consists of a GaAs infrared-emitting diode and a silicon npn phototransistor. The axial radiant intensity of the diode and the axial response o.f the phOtotransistor are... |
Features |
r to prevent visible light from entering the phototransistor.
Reduces Mechanical Design and Packaging Problems
High Sensitivity Excellent Stability Low Temperature Coefficient
Absolute Maximum Ratings
Maximum Temperature and Humidity
Storage Temperature
-40°C to +100°C
Operating Temperature
-40°C to +100°C
Pin Temperature (Soldering, 10 s) 260°C
Relative Humidity at 65°C
85%
Input Diode
IF Forward de Current VR Reverse Voltage
Power Dissipation at
= TA 25°C
Derate Linearly from 25°C
75 mA 3.0 V
110 mW 1.47 mW/oC
Output Transistor Ic Collector de Current VCE Collector-to-Emitter
Vo... |
Document |
FPA105 Data Sheet
PDF 170.23KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FPA100 |
Fairchild Semiconductor |
Emitter And Sensor Matched Pair Arrays | |
2 | FPA101 |
Fairchild Semiconductor |
Emitter And Sensor Matched Pair Arrays | |
3 | FPA102 |
Fairchild Semiconductor |
Emitter And Sensor Matched Pair Arrays | |
4 | FPA103 |
Fairchild Semiconductor |
Light Reflection Emitter / Sensor Array | |
5 | FPA104 |
Fairchild Semiconductor |
Light Reflection Emitter / Sensor Array | |
6 | FPA106 |
Fairchild Semiconductor |
Light Reflection Emitter / Sensor Array |