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CS14N10A3 |
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| Part Number | CS14N10A3 |
| Manufacturer | Huajing Microelectronics |
| Description | CS14N10 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enh... |
| Features |
l Fast Switching l Low ON Resistance(Rdson≤150 mΩ)
l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
100 V 14 A 43.1 W 113 mΩ
Absolute（TC= 25℃ unless otherwise specified）
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 IAS a2
PD
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Avalanche Energy Avalanche Current Power Dissipation Derati... |
| Document |
 CS14N10A3 Data Sheet
PDF 456.18KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | CS14-E2GA392MYNS |
TDK |
Disk Ceramic Capacitors |
|
| 2 | CS140 |
Coto |
High-Current Relays |
|
| 3 | CS142 |
IXYS Corporation |
Phase Control Thyristor |
|
| 4 | CS1420 |
Sumida |
Current Sense Transformer |
|
| 5 | CS147 |
Coto |
Relays |
|
| 6 | CS10-12.000MABJTR |
Citizen |
Surface Mount Crystals |
|
Desde 2024. D4U Semiconductor.
|