STL9N60M2 |
Part Number | STL9N60M2 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company'... |
Features |
Order code VDS @ TJmax RDS(on) max ID
STL9N60M2
650 V
0.86 Ω 4.8 A
• Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance a... |
Document |
STL9N60M2 Data Sheet
PDF 1.00MB |
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