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STF25N10F7 |
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| Part Number | STF25N10F7 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | th These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. ... |
| Features |
Order codes
STD25N10F7 STF25N10F7 STP25N10F7
VDSS 100 V 100 V 100 V
RDS(on) max.(1) 0.035 Ω 0.035 Ω 0.035 Ω
ID 25 A 19 A 25 A
PTOT 40 W 25 W 50 W
1. @ VGS = 10 V
• Ultra low on-resistance • 100% avalanche tested Applications • Switching applications ' Ć7$% * Description th These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 6 $0Y Order codes STD25N10F7 STF25N10F7 STP25N10F7 Table 1. Device summary Marking Package 25N10F7 ... |
| Document |
 STF25N10F7 Data Sheet
PDF 1.23MB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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