STD105N10F7AG |
Part Number | STD105N10F7AG |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charg... |
Features |
Order code
VDS RDS(on) max. ID PTOT
STD105N10F7AG 100 V 8 mΩ 80 A 120 W
Figure 1: Internal schematic diagram
D(2, TAB)
G(1) S(3)
Designed for automotive applications and AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster... |
Document |
STD105N10F7AG Data Sheet
PDF 535.33KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | STD100 |
Schneider |
Duct Temperature Sensor | |
2 | STD100 |
Sirectifier Semiconductors |
Thyristor-Diode Modules | |
3 | STD100N03L |
STMicroelectronics |
N-CHANNEL MOSFET | |
4 | STD100N03L-1 |
STMicroelectronics |
N-CHANNEL MOSFET | |
5 | STD100N10F7 |
STMicroelectronics |
N-channel Power MOSFET | |
6 | STD100N10F7 |
INCHANGE |
N-Channel MOSFET |