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STP110N10F7 |
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| Part Number | STP110N10F7 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. *... |
| Features |
TAB
3 2 1
TO-220FP
3 2 1
TO-220
Order codes VDS RDS(on) max ID PTOT
STF110N10F7 100 V 0.007 Ω
STP110N10F7
45 A 30 W 110 A 150 W
• Ultra low on-resistance • 100% avalanche tested Applications • Switching applications Figure 1. Internal schematic diagram ' 7$% Description These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. * 6 $0Y Order codes STF110N10F7 STP110N10F7 Table 1. Device summary Marking Package 110N10F7 TO-... |
| Document |
 STP110N10F7 Data Sheet
PDF 1.17MB |
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Desde 2024. D4U Semiconductor.
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