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STH240N10F7-2 |
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| Part Number | STH240N10F7-2 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | G(1) G(1) These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance... |
| Features |
Order code
VDS
RDS(on) max.
STH240N10F7-2 STH240N10F7-6
100 V
2.5 mΩ
• Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness ID 180 A D(TAB) D(TAB) Description G(1) G(1) These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. S(2, 3) for H2PAK-2 S(2, 3, 4, 5, 6, 7) for H2PAK-6 N-CHG1DTABS23_2_6 Product statu... |
| Document |
 STH240N10F7-2 Data Sheet
PDF 629.10KB |
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