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STH130N8F7-2 |
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| Part Number | STH130N8F7-2 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charg... |
| Features |
Order code STH130N8F7-2
VDS 80 V
R DS(on)max. 5.0 mΩ
ID 110 A
P TOT 205 W
Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STH130N8F7-2 Table 1: Device summary Marking Package 130N8F7 H²PAK-2... |
| Document |
 STH130N8F7-2 Data Sheet
PDF 656.65KB |
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