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STH275N8F7-6AG |
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| Part Number | STH275N8F7-6AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate char... |
| Features |
Order code STH275N8F7-2AG STH275N8F7-6AG
VDS RDS(on) max.
ID
80 V
2.1 mΩ
180 A
AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STH275N8F7-2AG STH275N8F7-6AG Table 1: Device... |
| Document |
 STH275N8F7-6AG Data Sheet
PDF 718.04KB |
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Desde 2024. D4U Semiconductor.
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